At-a-Glance
MedeA®[1] Electronics computes key electronic properties of metals, semiconductors, and insulators including isoenergy (Fermi) surfaces, electronic contributions to the electrical and thermal conductivity, thermoelectric power, and effective masses.
Key Benefits
Due to the Pauli principle, only the electronic states at the Fermi energy, and within a narrow energy range of width kBT around it, govern a material’s response to external electric or magnetic fields, or temperature gradients. Thus insight into the energy distribution of these states, and the nature of their wave functions thus is of utmost importance for understanding the material’s properties.
MedeA Electronics explores the electronic states within a narrow energy range about the Fermi energy, by giving access to ground-state properties, such as Fermi surfaces, specific heats, and effective masses, as well as transport properties, like the electronic contributions to the electrical and thermal conductivities and the thermoelectric power.
For example, the Fermi surface of MoO2, as shown in the Figure below, identifies three different sheets, namely, an electron-like peanut-shaped Fermi surface centered at the \(\Gamma\) point and two smaller hole-like Fermi surfaces each centered at the Y point, explaining the anisotropic electrical conductivity. Both angle-resolved photoemission spectroscopy and de Haas-van Alphen measurements show very good agreement with calculated Fermi surfaces, and thus underline the predictive power of first-principles calculations [2].
Fermi surface of MoO2calculated using MedeA Electronics
The concept of effective masses has gained importance in describing the response of electrons (and holes) to external electric and magnetic fields. Effective masses are determined by the curvature of the bands near the Fermi energy in metals or the bands close to the valence band maximum and conduction band minimum in semiconductors. Given the electronic states in that energy region effective masses can thus be straightforwardly calculated. As an example, calculated effective masses of silicon’s hole and electron states are given in the following table and found in almost perfect agreement with experimental data.
Exp. [3] | Exp. [4] | MedeA | |
---|---|---|---|
Electrons | |||
Long Eff. Mass | 0.92 | 0.98 | 0.94 |
Trans Eff. Mass | 0.19 | 0.19 | 0.20 |
DOS Mass | 1.06 | 1.08 | 1.09 |
Conductivity Mass | 0.26 | 0.27 | |
Heavy Hole | |||
Eff. Mass | 0.54 | 0.49 | 0.67 |
Light Hole | |||
Eff. Mass | 0.15 | 0.16 | 0.13 |
Split-off Band | |||
Eff. Mass | 0.23 | 0.24 | 0.22 |
Deviations are observed for the heavy-hole mass, which are related to the strong anisotropy of the \(\Gamma\)-point hole states as nicely demonstrated in the figure below illustrating the isosurface of the electronic states of Si at 0.7 eV below the valence band maximum.
Isoenergy surface of Si at -0.7 eV calculated using MedeA Electronics
Learn more about MedeA Electronics by checking out the following on Materials Design Application Notes page:
Check out the Datasheets on MedeA Fermi Surface and MedeA Electronic Transport for additional information.
[1] | MedeA and Materials Design are registered trademarks of Materials Design, Inc. |
[2] | J. Moosburger-Will, J. Kündel, M. Klemm, S. Horn, P. Hofmann, U. Schwingenschlögl, and V. Eyert, Phys. Rev. B 79, 115113 (2009) (DOI) |
[3] | H. D.. Barber, Solid State Electronics 10, 1039 (1967) (DOI) |
[4] | https://www.ioffe.ru/SVA/NSM/Semicond/Si/bandstr.html |
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